% {$ H6 x6 t/ ]! m( f- k! {+ e是的,官方推荐图里面也是驱动双NMOSFET。. o! V5 y- G& d7 @5 x$ |
The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts. . c( S( N% E$ s+ i : @: g4 ]. R' T. J. k% ~) Z- J: h1 E4 o5 ` T1 r% p5 `
其次,楼主的原理图的/SD引脚错误的接到GND了,应该接高电平。$ r# a" L% l( K0 J/ l$ r* b. U' p