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Design And Application Guide For High Speed MOSFET Gate Drive Circuits$ t7 Q4 M+ R* V8 U! J
The main purpose of this paper is to demonstrate a systematic approach to design high peRFormance0 p! B& V ]* w. \7 Q) S9 b
gate drive circuits for high speed switching applications. It is an informative collection of topics offering' s" H% n5 @8 x9 E+ f
a “one-stop-shopping” to solve the most common design challenges. Thus it should be of interest to
# V1 y) @. [7 I. wpower electronics engineers at all levels of experience.
- ?; s. e; |; eThe most popular circuit solutions and their performance are analyzed, including the effect of parasitic# n9 u* N7 z( M( t
components, transient and extreme operating conditions. The discussion builds from simple to more
# x H& ]- b, v: s* T; `- |! @& acomplex problems starting with an overview of MOSFET technology and switching operation. Design
! v; D& p* ^$ j8 iprocedure for ground referenced and high side gate drive circuits, AC coupLED and transformer isolated
0 P: a( v- |8 O* P' Ksolutions are described in great details. A special chapter deals with the gate drive requirements of the
; S. r) L" a+ Y6 R* G/ d9 b9 g/ NMOSFETs in synchronous rectifier applications.8 v9 k9 {, D% p8 O
Several, step-by-step numerical design examples complement the paper.! |' D! ]5 M1 R9 m6 v
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发表于 2022-7-25 09:54
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