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Matlab电子电路分析(第三卷)

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发表于 2020-5-19 10:40 | 只看该作者 回帖奖励 |倒序浏览 |阅读模式

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Matlab电子电路分析(第三卷)

8 v* d$ ~  F" o/ e% {; h  n6 cCHAPTER TEN
8 I3 w  f9 v# [* q/ s  ySEMICONDUCTOR PHYSICS
, y# F; R' ?9 f) v* pIn this chapter, a brief description of the basic concepts governing the flow of [size=9.96001pt]current in a pn junction are discussed. Both intrinsic and extrinsic semicon1 G9 s7 G. K. O+ a7 T
ductors are discussed. The characteristics of depletion and diffusion capaci[size=9.96001pt]tance are explored through the use of example problems solved with8 g- z5 O6 y5 }& W$ o
MATLAB. The effect of doping concentration on the breakdown voltage of[size=9.96001pt]pn junctions is examined.
5 g$ n) ]) d" _& T) d- D10.1 INTRINSIC SEMICONDUCTORS
- E% |' U" k3 i( `: R) [5 c10.1.1 Energy bands2 A" S9 Z5 x( m8 M4 B1 L& o
According to the planetary model of an isolated atom, the nucleus that con[size=9.96001pt]tains protons and neutrons constitutes most of the mass of the atom. Electrons! ]$ Z" U# _: {5 p8 D$ B$ S
surround the nucleus in specific orbits. The electrons are negatively charged[size=9.96001pt]and the nucleus is positively charged. If an electron absorbs energy (in the- O3 _4 \4 ^  Q2 o
form of a photon), it moves to orbits further from the nucleus. An electron[size=9.96001pt]transition from a higher energy orbit to a lower energy orbit emits a photon for% G7 @, X4 L- e; n7 x
a direct band gap semiconductor. % ^% R. x2 s3 M8 |+ h  }6 \
The energy levels of the outer electrons form energy bands. In insulators, the[size=9.96001pt]lower energy band (valence band) is completely filled and the next energy3 @% y! g( m$ E& I2 z
band (conduction band) is completely empty. The valence and conduction[size=9.96001pt]bands are separated by a forbidden energy gap.
! J7 c; D& F- j4 |% h. s  r$ t9 R0 {. A# ~/ F" W7 N0 c, I8 |5 q
[size=9.96001pt]
* @/ I2 v" _8 J6 y5 h: \
# R, _4 M6 M8 U3 g3 ^2 R6 p1 A9 ]
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