Matlab电子电路分析（第三卷）

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Matlab电子电路分析（第三卷）

CHAPTER TEN
& W; L6 n% t& VSEMICONDUCTOR PHYSICS
In this chapter, a brief description of the basic concepts governing the flow of [size=9.96001pt]current in a pn junction are discussed. Both intrinsic and extrinsic semicon
ductors are discussed. The characteristics of depletion and diffusion capaci[size=9.96001pt]tance are explored through the use of example problems solved with
MATLAB. The effect of doping concentration on the breakdown voltage of[size=9.96001pt]pn junctions is examined.
) ~) _4 [' k: C: D0 F10.1 INTRINSIC SEMICONDUCTORS
10.1.1 Energy bands
* x: G5 i& z1 nAccording to the planetary model of an isolated atom, the nucleus that con[size=9.96001pt]tains protons and neutrons constitutes most of the mass of the atom. Electrons
5 ^: C! Z2 g! [. |% F5 _surround the nucleus in specific orbits. The electrons are negatively charged[size=9.96001pt]and the nucleus is positively charged. If an electron absorbs energy (in the
2 l) _- H* q  W% o* R0 hform of a photon), it moves to orbits further from the nucleus. An electron[size=9.96001pt]transition from a higher energy orbit to a lower energy orbit emits a photon for
0 @3 g) f5 z( G* F+ ga direct band gap semiconductor.
The energy levels of the outer electrons form energy bands. In insulators, the[size=9.96001pt]lower energy band (valence band) is completely filled and the next energy
9 Z2 X8 f0 o: E$ jband (conduction band) is completely empty. The valence and conduction[size=9.96001pt]bands are separated by a forbidden energy gap.

5 [1 n7 e: S9 i6 y[size=9.96001pt]
1 J5 W. U* b' v# S( U( f2 i

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