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2020-1-14 15:59 |
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FPGA导出的IBIS模型如何编辑修改差分的模型？2 R) |! H7 j* H" e0 E* X
+ U" y0 |* | w5 d发现导出来的默认没有差分定义的模型（虽然IO分配上定义差分对）
. t+ a8 c% f P D- k: k1 _: d如果只是在IBIS文件上手动添加 差分对管脚是否够用？
6 \: J4 d% L5 B, C0 x4 H6 A[Model] DQ_FULL_800
5 c" R9 w; j. F" Z6 K% R7 TModel_type I/O. \. a& Y) _' t x
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8 d, x4 N U- r; M8 Q8 E4 fVinl = 700.000mV8 }; v/ Z0 o: L! k( ^% W" G
Vinh = 1.100V
2 z/ k. J+ F( C2 g) FVmeas = 900.000mV
$ y! R# A8 G8 a5 c+ N/ QVref = 900.000mV$ w$ G& O4 }: `, d
Cref = 0.000pF; D. @ B" e1 Q6 a7 V; M
Rref = 25.000Ohm
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| typ min max
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# l" E8 H( R* W. I4 Z4 w) Z0 cC_comp 2.466pF 2.316pF 2.616pF
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[Model Spec]& \( M4 O9 H+ \1 {: g
| Input threshold voltage corners+ ^! R& a( ~/ K# T
Vinl 0.700V 0.650V 0.750V% ]1 u2 R5 P* i! P- l& P0 A; {
Vinh 1.100V 1.050V 1.150V: M( W6 C- Q2 q7 H) t+ a- S- O
|- Q1 f# W' u# g$ Z* B: A% u) _
| Measurement voltage corners
- e. x( i+ U" M; q7 e2 \2 OVmeas 0.900V 0.850V 0.950V
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" ~2 B5 k- ?/ q: k6 e! K# b| Timing spec test load voltage corners, T$ x! `2 {/ L o
Vref 0.900V 0.850V 0.950V
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[Receiver Thresholds]
3 W& o) n5 ~' x7 RVth = 0.900V
9 e0 n7 ^5 |; G5 O3 K6 ZVth_min = 0.882V
0 d: @+ S7 d. I, V5 G" s( Q, N! aVth_max = 0.918V
1 }. R* j' `2 w' C- cVinh_ac = 0.200V
( o6 i9 ^6 [+ q% d0 ]. UVinh_dc = 0.125V
1 K! Z" H% Z2 c1 l& ?5 EVinl_ac = -0.200V8 z2 ~& }/ z( d% u w
Vinl_dc = -0.125V- Z6 y( c2 [3 G" [7 G( s* j) c1 ?3 l
Tslew_ac = 5.000ns |Not specified, so set to high value' e) X$ [& K# G7 W6 R3 I
Threshold_sensitivity = 0.50# M5 c2 K+ i6 C" u$ F& t
Reference_supply Pullup_ref* H& |% d/ W9 b# y
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3 ~/ @& ?+ Q- k5 J& v: ~9 Y[Voltage Range] 1.800V 1.700V 1.900V3 b! `) k3 [6 _1 x& @
[Pullup Reference] 1.800V 1.700V 1.900V
" S. _! a$ P* a. }| Junction Temperature (Ambient temp is 35C typ, 105C min, -40C max)
! B% P7 X: h% y: g% z- i8 A[Temperature Range] 50.0 120.0 -40.0$ U* j. D$ e' e
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) j0 V% |/ A5 M7 K7 p9 u|***************************************************************************
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2 F8 I+ ^( O/ s& F* G[Model] DQS_FULL_800* o! C0 {9 I$ A
Model_type I/O$ L$ S6 G/ ^* R7 l
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Vinl = 700.000mV7 @4 F m0 E* Q; u' E/ T T
Vinh = 1.100V3 d3 n0 r2 m! ^/ w9 ?/ M( H
Vmeas = 900.000mV
" r% j% e% E% w l! j' [7 r% KVref = 900.000mV
; A; d+ q6 Y! |9 H3 T1 b/ VCref = 0.000pF
$ R/ ]$ ^, @, O, aRref = 25.000Ohm/ K6 s+ Z. v- l* s6 ~* ]
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| typ min max
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C_comp 2.466pF 2.316pF 2.616pF
) H$ | b( T9 S2 _# E8 V|8 O5 e0 L: [' G# R2 ~! k. ?
[Model Spec]( ^' ~3 u( q# `1 q I6 e
| Input threshold voltage corners
1 F% j' G) O0 D7 D. f& ZVinl 0.700V 0.650V 0.750V0 b; V7 v3 j/ p2 i4 a2 b8 |$ _" W
Vinh 1.100V 1.050V 1.150V2 o7 }. h0 ]* {2 j
|: C8 C0 W. s# ~5 {4 c! X, f# d- Y( g
| Measurement voltage corners1 Q9 U6 ^" d& E3 c- m
Vmeas 0.900V 0.850V 0.950V+ D2 T) B: j( @3 U4 L& t
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- G' r2 R6 M0 j5 Y% \7 t| Timing spec test load voltage corners
5 K1 a2 v% V [, Y+ V# r) OVref 0.900V 0.850V 0.950V# u' r0 C# y( N9 N! v
|7 {: U. q2 u. ~0 } G# _5 Q& s
[Receiver Thresholds] & i$ K( K$ ~$ o9 M$ T
|Vth = 0.900V8 |( {' U' v5 t" k. `
|Vth_min = 0.882V+ p6 m7 k2 l+ e
|Vth_max = 0.918V
9 c2 a! K% l, w1 v* Q, {, H: x|Vinh_ac = 0.200V c( f- n& T) u9 }2 B
|Vinh_dc = 0.125V1 g5 }$ X+ o" {* p' `$ d4 D0 d
|Vinl_ac = -0.200V
) w7 G) |, T/ `* J|Vinl_dc = -0.125V
0 F+ U0 B. O) M|Tslew_ac = 5.000ns |Not specified, so set to high value2 ~: ^0 u6 ?5 D2 Y
|Threshold_sensitivity = 0.50
2 X$ p+ V+ _$ _5 T5 p; I4 {- y|Reference_supply Pullup_ref# L/ N1 {1 N) T0 I# o
|3 @1 M9 ?0 _2 |
|NOTE: If using the IBISCHK 4.2.1 or older parser, Differential receiver % L* f2 [& ?" k2 h# V7 r
|threshold parameters must be commented out because the parser generates
1 y; {, t& m8 y/ h {3 u) V$ @|errors for multiple differential models.
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& X! q3 N0 V6 K4 S NVcross_low = 0.675V0 y( u+ G4 m* _
Vcross_high = 1.125V
% ^, L9 F0 r3 J) }' D' WVdiff_ac = 500mV% p5 G' v: k+ c
Vdiff_dc = 250mV" Z, |; e# Z& A3 B
Tdiffslew_ac = 5.000ns |Not specified, so set to high value2 f+ R% z# A- p5 C& k& X9 x: M; G
|* W1 I) w5 F2 c. \7 {) k, _2 W
[Voltage Range] 1.800V 1.700V 1.900V2 H7 Q- @$ p3 I* L I
[Pullup Reference] 1.800V 1.700V 1.900V
. J( E8 S# s. D- v% h| Junction Temperature (Ambient temp is 35C typ, 105C min, -40C max)
6 |1 h5 k6 v; C[Temperature Range] 50.0 120.0 -40.0. ~; w* P; D- Q2 Q6 F! A, X
|' T) T a" A% F& H8 K
|***************************************************************************
8 G$ ?9 K% \& b+ S# k2 P|8 L: v4 s6 Q' Z& z1 V+ p. T8 L
) A9 y( ^ z4 X: ?/ ?' q' t这是从 美光DDR2的IBIS模型里面截取出来的，对着DQ与DQS在模型上的定义/ O2 _2 o* t# F" W N
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====================================================================================
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手动修改编辑成下面的这样的时候发现编辑器会提示错误
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4 Y$ b: G1 S" n, H( M[Model Selector] DQ9 N7 o F! \" T# t6 s
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DQ_SSTL18_II_F_HR
5 R5 e/ C% ], X: v7 ^1 @ M6 z1 DDQ_SSTL18_II_S_HR
; _0 Y) ]$ ^- [2 {$ NDQ_SSTL18_II_F_HR_IN50( H2 S4 D) ^! J) y( J' d8 A
DQ_LVCMOS18_F_4_HR3 g# }3 D$ D2 w# J+ e' ]7 ]5 Q
DQ_LVCMOS18_F_8_HR
% n' K: r3 P, [3 J% e|5 M" u$ i/ ?: o) R+ K. T
[Model Selector] DQS7 V% c8 w& X8 {$ v6 V
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4 s: C2 r/ \( U N; CDQS_SSTL18_II_F_HR
: e+ q) f+ }/ fDQS_SSTL18_II_F_HR_IN50
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ibis编辑器检查的时候发现提示的错误是：incorrect number of line items for keyword model selector expecting 2! C9 X( {2 n o4 Z! v
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发表于 2020-3-20 10:48
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