True-Hspice Device模型参考手册

snowwolfe · 发表于 2008-3-25 17:14

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Table of Contents
Audience ............................................................................................. iii
Related Documents ............................................................................. iii
Conventions ........................................................................................ iv
Obtaining Customer Support .............................................................. vi
Other Sources of Information ............................................................ vii
Revision History ............................................................................... viii
Chapter 1 - Overview of Models ..................................................................... 1-1
Using Models to Define Netlist Elements .............................................. 1-2
Supported Models for Specific Simulators ....................................... 1-2
Selecting Models .............................................................................. 1-3
Example ............................................................................................ 1-3
Chapter 2 - Using Passive Device Models....................................................... 2-1
Resistor Device Model and Equations .................................................... 2-2
Wire RC Model ................................................................................. 2-2
Resistor Model Equations ................................................................. 2-5
Capacitor Device Model and Equations ............................................... 2-10
Capacitance Model ......................................................................... 2-10
Capacitor Device Equations ........................................................... 2-11
Inductor Device Model and Equations ................................................. 2-14
Inductor Core Models ..................................................................... 2-15
Magnetic Core Element Outputs .................................................... 2-18
Inductor Device Equations ............................................................. 2-19
Jiles-Atherton Ferromagnetic Core Model ..................................... 2-21
Power Sources ....................................................................................... 2-30
Independent Sources ....................................................................... 2-30
Controlled Sources .......................................................................... 2-33
Chapter 3 - Using Diodes ................................................................................. 3-1
Diode Types ............................................................................................ 3-2
Using Diode Model Statements .............................................................. 3-3
Setting Control Options .................................................................... 3-3
Specifying Junction Diode Models ......................................................... 3-5
Using the Junction Model Statement ................................................ 3-6
Using Junction Model Parameters .................................................... 3-7
Geometric Scaling for Diode Models ............................................. 3-13
Defining Diode Models ................................................................... 3-15
Determining Temperature Effects on Junction Diodes ................... 3-18
Using Junction Diode Equations ........................................................... 3-21
Using Junction DC Equations ......................................................... 3-22
Using Diode Capacitance Equations ............................................... 3-25
Using Noise Equations .................................................................... 3-27
Temperature Compensation Equations ........................................... 3-28
Using the Junction Cap Model .............................................................. 3-32
Setting Juncap Model Parameters ................................................... 3-33
Theory ............................................................................................. 3-33
JUNCAP Model Equations ............................................................. 3-38
Using the Fowler-Nordheim Diode ...................................................... 3-46
Converting National Semiconductor Models ........................................ 3-48
Chapter 4 - Using BJT Models ........................................................................ 4-1
Using BJT Models .................................................................................. 4-2
Selecting Models ............................................................................... 4-2
BJT Model Statement ............................................................................. 4-4
Using BJT Basic Model Parameters ................................................. 4-5
Handling BJT Model Temperature Effects ..................................... 4-15
BJT Device Equivalent Circuits ............................................................ 4-21
Scaling ............................................................................................. 4-21
Understanding the BJT Current Convention ................................... 4-21
Using BJT Equivalent Circuits ....................................................... 4-22
BJT Model Equations (NPN and PNP) ................................................. 4-30
Understanding Transistor Geometry in Substrate Diodes .............. 4-30
Using DC Model Equations ............................................................ 4-32
Using Substrate Current Equations ................................................. 4-33
Using Base Charge Equations ......................................................... 4-34
Using Variable Base Resistance Equations .................................... 4-35
Using BJT Capacitance Equations ........................................................ 4-36
Using Base-Emitter Capacitance Equations ................................... 4-36
Determining Base Collector Capacitance ....................................... 4-38
Using Substrate Capacitance ........................................................... 4-40
Defining BJT Noise Equations ............................................................. 4-42
BJT Temperature Compensation Equations ......................................... 4-44
Using Energy Gap Temperature Equations .................................... 4-44
Saturation and Beta Temperature Equations, TLEV=0 or 2 ........... 4-44
Using Saturation and Temperature Equations, TLEV=1 ................ 4-46
Using Saturation Temperature Equations, TLEV=3 ....................... 4-47
Using Capacitance Temperature Equations .................................... 4-49
Parasitic Resistor Temperature Equations ...................................... 4-51
Using BJT Level=2 Temperature Equations .................................. 4-52
BJT Quasi-Saturation Model ................................................................ 4-53
Using Epitaxial Current Source Iepi ............................................... 4-55
Epitaxial Charge Storage Elements Ci and Cx ............................... 4-55
Converting National Semiconductor Models ........................................ 4-58
VBIC Bipolar Transistor Model ........................................................... 4-60
Understanding the History of VBIC ............................................... 4-60
VBIC Parameters ............................................................................ 4-61
Noise Analysis ................................................................................ 4-62
Level 6 Philips Bipolar Model (MEXTRAM Level 503) ..................... 4-71
Level 6 Element Syntax .................................................................. 4-71
Level 6 Model Parameters .............................................................. 4-72
Level 6 Philips Bipolar Model (MEXTRAM Level 504) ..................... 4-78
Notes ............................................................................................... 4-79
Level 6 Model Parameters (504) ..................................................... 4-80
Level 8 HiCUM Model ......................................................................... 4-94
What is the HiCUM Model? ........................................................... 4-94
HiCUM Model Advantages ............................................................ 4-94
Avant! HiCUM Model vs. Public HiCUM Model .......................... 4-96
Model Implementation .................................................................... 4-96
Internal Transistors ......................................................................... 4-97
Level 9 VBIC99 Model ...................................................................... 4-110
Element Syntax of BJT Level 9 .................................................... 4-110
Effects of VBIC99 ........................................................................ 4-112
Model Implementation .................................................................. 4-112
Example ........................................................................................ 4-119
VBIC99 Notes for HSPICE Users ................................................ 4-123
Level 10 Phillips MODELLA Bipolar Model .................................... 4-124
Model Parameters ......................................................................... 4-124
Equivalent Circuits ........................................................................ 4-129
DC Operating Point Output .......................................................... 4-131
Model Equations ........................................................................... 4-132
Temperature Dependence of the Parameters ................................ 4-142
Level 11 UCSD HBT Model .............................................................. 4-146
Using the UCSD HBT Model ....................................................... 4-146
Description of Parameters ............................................................. 4-147
Model Equations ........................................................................... 4-152
Equivalent Circuit ......................................................................... 4-163
Example Avant! True-Hspice Model Statement ........................... 4-165
Chapter 5 - Using JFET and MESFET Models............................................. 5-1
Understanding JFETs .............................................................................. 5-2
Specifying a Model ................................................................................. 5-3
Understanding the Capacitor Model ....................................................... 5-5
Model Applications ........................................................................... 5-5
Control Options ................................................................................. 5-6
JFET and MESFET Equivalent Circuits ................................................. 5-7
Scaling ............................................................................................... 5-7
Understanding JFET Current Convention ........................................ 5-7
JFET Equivalent Circuits .................................................................. 5-8
JFET and MESFET Model Statements ................................................. 5-13
JFET and MESFET Model Parameters ........................................... 5-13
Gate Diode DC Parameters ............................................................. 5-15
JFET and MESFET Capacitances ................................................... 5-25
Capacitance Comparison (CAPOP=1 and CAPOP=2) ................... 5-29
JFET and MESFET DC Equations ................................................. 5-31
JFET and MESFET Noise Models ....................................................... 5-35
Noise Parameters ........................................................................... 5-35
Noise Equations .............................................................................. 5-35
Noise Summary Printout Definitions .............................................. 5-36
JFET and MESFET Temperature Equations ........................................ 5-37
Temperature Compensation Equations ........................................... 5-40
。。。。。。。。。。。

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狂想的旅程 · 发表于 2018-1-28 23:03

xiexie lou zhu

bingshuihuo · 发表于 2023-6-11 10:40

好啊。感谢啊

Justinkunt · 发表于 2018-3-16 21:55

支持，頂一個

soda2010 · 发表于 2008-8-21 22:17

xiexiele

superfect · 发表于 2008-11-6 21:01

好啊。感谢啊

winstonguo · 发表于 2009-4-18 17:20

感激！

muzi0623 · 发表于 2009-12-25 15:03

谢谢，学习中

kyang74 · 发表于 2010-1-30 15:13

谢谢~

pzh2006 · 发表于 2010-3-5 15:25

好东西

andy.wei · 发表于 2012-6-5 20:36

谢谢分享

zl0721 · 发表于 2012-7-6 14:47

kan kan

Colin_Zhou · 发表于 2012-8-8 16:18

thanks a lot ,very good materials

ssping · 发表于 2012-10-14 16:39

先下了，谢谢！努力学习

shuaiwang · 发表于 2015-4-16 22:26

谢谢

灯火枫桥 · 发表于 2015-4-18 17:03

谢谢啊！

狂想的旅程 · 发表于 2018-1-28 23:06

好资料

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