|
|
EDA365欢迎您登录！
您需要 登录 才可以下载或查看，没有帐号？注册
x
Table of Contents
( b1 h% n9 c# a- M3 pAudience ............................................................................................. iii# J1 ^1 a5 d, b/ N' p; t
Related Documents ............................................................................. iii
- u/ B3 ]5 O F9 U, g# i/ `Conventions ........................................................................................ iv
/ p& ^6 Q/ _3 s* s: o5 t# W2 BObtaining Customer Support .............................................................. vi
. b! K! o' }7 ZOther Sources of Information ............................................................ vii
2 c7 ~0 Q; j URevision History ............................................................................... viii; a% Z g$ k- w2 d) H- ^! {
Chapter 1 - Overview of Models ..................................................................... 1-1
3 f8 c0 _- y& B, {Using Models to Define Netlist Elements .............................................. 1-2
7 ~6 E- T9 c! F2 p. ASupported Models for Specific Simulators ....................................... 1-2
& H: d4 ?4 C- Y' v: d3 O: o$ vSelecting Models .............................................................................. 1-3, `2 I. P9 M" Q( p0 o. R: U7 b
Example ............................................................................................ 1-3
7 C: b/ h& q4 {; X4 j6 aChapter 2 - Using Passive Device Models....................................................... 2-1
; L. D4 v$ {4 E- z3 ~' N* kResistor Device Model and Equations .................................................... 2-2
! B3 f5 i% u0 j, P2 R: O" Y5 S [Wire RC Model ................................................................................. 2-2
7 V2 w. y: @. cResistor Model Equations ................................................................. 2-5. N8 o+ Q* Q; W' T6 t+ X
Capacitor Device Model and Equations ............................................... 2-10: H# D1 w: ?# R% C5 m7 F% {
Capacitance Model ......................................................................... 2-10( e; Z" B9 z# Q8 s
Capacitor Device Equations ........................................................... 2-11
* }& W+ w1 }6 b' I0 d8 D2 rInductor Device Model and Equations ................................................. 2-14# P/ }1 [) q3 V% j$ v/ ^
Inductor Core Models ..................................................................... 2-15+ P1 ~' O* ?. B" O2 |
Magnetic Core Element Outputs .................................................... 2-18. E$ [ q: C* z: ^9 ]& m7 n4 C
Inductor Device Equations ............................................................. 2-19
. h4 p8 z2 f- }6 }0 U7 P% B$ y' KJiles-Atherton Ferromagnetic Core Model ..................................... 2-21
) V: @" y* n- cPower Sources ....................................................................................... 2-300 E# V, A2 k1 V
Independent Sources ....................................................................... 2-30
" ~! j5 I- ?/ nControlled Sources .......................................................................... 2-33! s5 D" Z& r0 L5 d3 e: u
Chapter 3 - Using Diodes ................................................................................. 3-1
* d2 }9 S1 i! e( {% M" c4 KDiode Types ............................................................................................ 3-2
, T+ f/ t! J3 ]* t0 N) E& M4 J& WUsing Diode Model Statements .............................................................. 3-3 ^/ g" M. b4 \# B
Setting Control Options .................................................................... 3-30 L, i: m1 {) _' E5 {
Specifying Junction Diode Models ......................................................... 3-5
8 a! j# P/ i5 O, [# B' IUsing the Junction Model Statement ................................................ 3-63 q0 L, R v; d. c. l" _: k
Using Junction Model Parameters .................................................... 3-7/ U" B0 N- o- Q5 M1 N$ T
Geometric Scaling for Diode Models ............................................. 3-13* {) r1 w1 s/ v! A
Defining Diode Models ................................................................... 3-15
4 E- F" S( L/ w; s+ T- h2 u! V6 DDetermining Temperature Effects on Junction Diodes ................... 3-18
6 }+ r5 F- `( k- c" mUsing Junction Diode Equations ........................................................... 3-21
" o K' n+ h" y6 C ?! v3 fUsing Junction DC Equations ......................................................... 3-221 U* i- W& v' x6 r. I/ v
Using Diode Capacitance Equations ............................................... 3-25- z2 Y M9 Q* e: H; i8 p; E
Using Noise Equations .................................................................... 3-27) |; Z0 y5 T9 P- R4 @, \ a' F
Temperature Compensation Equations ........................................... 3-28& A0 [& E' h: F- l C- f
Using the Junction Cap Model .............................................................. 3-32$ a/ W) G; n& R7 Z( Q
Setting Juncap Model Parameters ................................................... 3-33
1 H' _0 {/ \$ j' A6 ZTheory ............................................................................................. 3-33 k4 m/ G! ], I* d" Y! R5 d& T1 c
JUNCAP Model Equations ............................................................. 3-38
& x, D9 C* W+ t" X: Q3 sUsing the Fowler-Nordheim Diode ...................................................... 3-46
. J5 g0 ]" D. e& U) zConverting National Semiconductor Models ........................................ 3-48
. I3 e l, Y7 J( V$ cChapter 4 - Using BJT Models ........................................................................ 4-1
0 g9 s2 O4 ~7 P" `' d4 uUsing BJT Models .................................................................................. 4-2" ^+ Y3 P e B
Selecting Models ............................................................................... 4-24 a r0 z, P$ R/ b& a i
BJT Model Statement ............................................................................. 4-46 {, H% z6 s% }
Using BJT Basic Model Parameters ................................................. 4-5
; ^) T/ \3 H$ n/ R% JHandling BJT Model Temperature Effects ..................................... 4-15
0 n( w* }2 r, }BJT Device Equivalent Circuits ............................................................ 4-21, O& U4 @% k% H. V2 T' H
Scaling ............................................................................................. 4-21
: R/ @% I# N S! B- w5 p8 ^- F" T7 hUnderstanding the BJT Current Convention ................................... 4-21/ Z, }. P; D! d& ?" n
Using BJT Equivalent Circuits ....................................................... 4-22- z( V& e# k' K# i
BJT Model Equations (NPN and PNP) ................................................. 4-30
3 L6 b! R9 m) P5 g" p" yUnderstanding Transistor Geometry in Substrate Diodes .............. 4-302 X0 l# l1 q. X2 q. j8 g! o
Using DC Model Equations ............................................................ 4-32
) x6 R" U/ |3 r( ~4 o- q& ]* dUsing Substrate Current Equations ................................................. 4-33
! `2 R, m# j/ }% E, z4 NUsing Base Charge Equations ......................................................... 4-34
' b) P4 ^/ q. O, }Using Variable Base Resistance Equations .................................... 4-358 [ ~3 ?1 c! m" |& F
Using BJT Capacitance Equations ........................................................ 4-36
% t4 y( n1 @% e3 M# jUsing Base-Emitter Capacitance Equations ................................... 4-36( S0 Q2 j. y+ l8 b; o% \' M% l
Determining Base Collector Capacitance ....................................... 4-38
# |0 N4 \3 `* y$ eUsing Substrate Capacitance ........................................................... 4-40 H& u+ _ C0 K5 _( [
Defining BJT Noise Equations ............................................................. 4-42
% e4 {; ^" @6 P; T8 {BJT Temperature Compensation Equations ......................................... 4-44
5 C2 T) K3 Z$ K* xUsing Energy Gap Temperature Equations .................................... 4-44
9 O2 {1 y7 m, F/ y5 V( n7 O: eSaturation and Beta Temperature Equations, TLEV=0 or 2 ........... 4-44
; L W% r R; m0 z8 QUsing Saturation and Temperature Equations, TLEV=1 ................ 4-46* D! z$ d) ]: ^7 @3 d8 M5 I
Using Saturation Temperature Equations, TLEV=3 ....................... 4-47/ G3 J, K- }( _* W# S+ a4 F
Using Capacitance Temperature Equations .................................... 4-49
- C. n+ L5 U+ y- {8 c8 e; SParasitic Resistor Temperature Equations ...................................... 4-51
/ c/ U ?) ?- s% r5 @/ y5 w6 E, M1 UUsing BJT Level=2 Temperature Equations .................................. 4-52
/ z5 g4 }- T# O! ^BJT Quasi-Saturation Model ................................................................ 4-53
9 q! D' q% { m$ VUsing Epitaxial Current Source Iepi ............................................... 4-55+ d) G$ ~9 k+ m) ^. a% G: [" n4 l
Epitaxial Charge Storage Elements Ci and Cx ............................... 4-55
0 e3 A, I9 @# Y4 }Converting National Semiconductor Models ........................................ 4-58
2 O5 d& k0 j8 c6 {# u2 |9 z6 g- GVBIC Bipolar Transistor Model ........................................................... 4-60
( C! ?9 V5 I- l2 f7 A' W. CUnderstanding the History of VBIC ............................................... 4-607 z5 \( U3 i4 d- y. Y9 W B0 Z, s
VBIC Parameters ............................................................................ 4-61- ?; c" y& ?% Y1 P- M
Noise Analysis ................................................................................ 4-621 h) t1 [3 a# T6 ~
Level 6 Philips Bipolar Model (MEXTRAM Level 503) ..................... 4-71
7 G, t/ w2 U7 M- q3 f0 a2 s; U, @Level 6 Element Syntax .................................................................. 4-715 Z5 D0 P' A+ Y- V6 J
Level 6 Model Parameters .............................................................. 4-72
' K. s. |7 n m) A' j% V( @4 DLevel 6 Philips Bipolar Model (MEXTRAM Level 504) ..................... 4-78" L* _8 [1 |1 C: D3 |
Notes ............................................................................................... 4-79
& J' F! _3 C5 e7 n8 [* S, ~Level 6 Model Parameters (504) ..................................................... 4-805 ?: ]9 M6 u3 s! G a
Level 8 HiCUM Model ......................................................................... 4-94
7 {3 O! L5 }+ H: MWhat is the HiCUM Model? ........................................................... 4-94
! w/ e+ ^2 ?! I2 a- \HiCUM Model Advantages ............................................................ 4-94
0 m' H$ q' d- sAvant! HiCUM Model vs. Public HiCUM Model .......................... 4-96; B, J: U7 s, S$ W; ?
Model Implementation .................................................................... 4-96
& J2 A9 S/ ~# b) B/ @, ~) K0 xInternal Transistors ......................................................................... 4-97( x9 Q8 w1 J* T6 e. {
Level 9 VBIC99 Model ...................................................................... 4-110- O6 [( m, J! ?8 q0 A9 ]; |
Element Syntax of BJT Level 9 .................................................... 4-110
$ n" o7 S! W, R3 ]' dEffects of VBIC99 ........................................................................ 4-112
$ H9 ] [; o5 L/ _2 B6 VModel Implementation .................................................................. 4-112; T0 r" n+ r$ h* p( X; P+ E
Example ........................................................................................ 4-119. } f& I6 W1 i: s/ Z- l/ W
VBIC99 Notes for HSPICE Users ................................................ 4-123
% O( ]( [' ]$ p- Z, ^Level 10 Phillips MODELLA Bipolar Model .................................... 4-124
# {9 J3 y: N8 e. @3 i4 F0 n3 MModel Parameters ......................................................................... 4-124
! Y$ {; G" p; F$ O$ ^1 R; w& b6 sEquivalent Circuits ........................................................................ 4-1292 P9 o5 M+ }( h `8 B9 U5 p$ b
DC Operating Point Output .......................................................... 4-131
1 n- r2 H0 {) V$ P+ UModel Equations ........................................................................... 4-132
, h( ~/ B+ k5 U, a4 O' ETemperature Dependence of the Parameters ................................ 4-142
" c0 ~* T5 D! l+ ELevel 11 UCSD HBT Model .............................................................. 4-146" f( l2 ^$ ^9 @3 U! s% l
Using the UCSD HBT Model ....................................................... 4-146( o9 Y4 R- Z8 k' S9 l W. w U- t
Description of Parameters ............................................................. 4-147
: V% x) K7 X2 j2 U! S7 ZModel Equations ........................................................................... 4-152
% T; d) r7 J7 U. z- ~Equivalent Circuit ......................................................................... 4-163
, m' u2 A7 {( d$ q' QExample Avant! True-Hspice Model Statement ........................... 4-165
2 U6 G8 J6 \$ E4 ~Chapter 5 - Using JFET and MESFET Models............................................. 5-1
( J7 ^6 n8 D6 x: H1 k& mUnderstanding JFETs .............................................................................. 5-28 F0 P2 _- B+ A: Y$ |
Specifying a Model ................................................................................. 5-34 J% L; u/ G9 e9 w* ] f a- o
Understanding the Capacitor Model ....................................................... 5-5
8 t/ w7 p ]7 }* {8 p! cModel Applications ........................................................................... 5-5% G5 J0 p6 R1 ?8 ^
Control Options ................................................................................. 5-6
3 v: [+ e. |! b. O9 iJFET and MESFET Equivalent Circuits ................................................. 5-7- b5 G/ h7 G6 l/ j# l
Scaling ............................................................................................... 5-7% k8 M( ?: Z. M- q" d
Understanding JFET Current Convention ........................................ 5-78 _3 R3 e: \, Y8 i2 L7 S
JFET Equivalent Circuits .................................................................. 5-8
6 P" M) I0 E3 m$ QJFET and MESFET Model Statements ................................................. 5-13
+ @3 e, X9 |7 R! [ Y* ZJFET and MESFET Model Parameters ........................................... 5-134 E0 D' |6 |' I
Gate Diode DC Parameters ............................................................. 5-15' \3 C W/ \& T `( e
JFET and MESFET Capacitances ................................................... 5-25
* C6 Q. P! G& y2 J( L$ vCapacitance Comparison (CAPOP=1 and CAPOP=2) ................... 5-294 j1 O, Q ^% J
JFET and MESFET DC Equations ................................................. 5-31
: r2 y/ V" g8 p- JJFET and MESFET Noise Models ....................................................... 5-35
- l/ @; M7 D8 g' ]5 g o) }Noise Parameters ........................................................................... 5-35/ r3 R ~: a: F
Noise Equations .............................................................................. 5-35( ]4 E3 }5 g5 m* d
Noise Summary Printout Definitions .............................................. 5-36( e8 }4 [" b1 d4 a( z8 |7 L. D' l
JFET and MESFET Temperature Equations ........................................ 5-37! r6 U. o2 N% _; |/ X) k
Temperature Compensation Equations ........................................... 5-40" f/ a6 @. U- Z2 \5 `2 N- m! V
。。。。。。。。。。。
5 E( _: j0 v' N- i4 f( s, q: ^5 x6 ]2 O' f
9 r% n0 _5 w/ l7 k7 J$ T. {5 Z
|
|
[复制链接]
/1 
发表于 2008-3-25 17:14
收藏
淘帖
支持！
反对！
thanks a lot ,very good materials