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各位大侠: k1 r% i$ m$ I* }
现在碰到一个问题4 N0 r! V" o0 }$ {, D
就是ddr2内存接续的问题8 U. R/ W& V. z) H7 Z8 o
现在系统cpu是三星的32位的s3c2450(ARM9核心),支持ddr,mobile ddr和ddr2" _) S% I& U5 R* z6 v3 J9 H0 C
The S3C2450 Mobile DRAM Controller supports three kinds of memory inteRFace - (Mobile) SDRAM and mobile
" G. Y: y6 s# z6 ~1 \/ }DDR and DDR2. Mobile DRAM controller provides 2 chip select signals (2 memory banks), these are used for up
. [ T- c7 O4 R! nto 2 (mobile) SDRAM banks or 2 mobile DDR banks or 2 DDR2 banks. Mobile DRAM controller can’t support 3" [) z/ W) m+ V
kinds of memory interface simultaneous, for example one bank for (mobile) SDRAM and one bank for mobile
# _' B$ D! x+ g; u( PDDR.
5 i" X" n; u# D! f7 Q( X% mDDR2 Features; X/ L! ~ w" s, R9 R. H' d
− Support DDR2 having 4-bank architecture, don’t support 8-bank architecture.
0 r1 x. k! B& H- L; X2 s. i$ d1 h− Support 16-bit external data bus interface9 v$ ^1 D3 N5 P2 R+ o. L
− Support AL(Additive Latency) 0, don’t support posted CAS, it needs EMRS setting.8 r0 G) N% j6 j+ S) W! k
− Don’t support ODT and nDQS function, it needs EMRS setting.
: C; x, R6 c4 W5 {- S$ o− All other features are same to the features of SDR/mDDR
+ b9 A7 ~9 k. H2 z9 e( u ^' H4 ` a7 Z- E* e
但是我看他们接续的时候
1 Y7 I4 x6 u8 H7 n$ ]( J! T' f接续了两个ddr2 (32M*16),而内存上只有十六位数据线1 h. P3 j# L8 m
于是他们就将两个内存芯片的数据线分为高十六位和低十六位+ Y! Q5 w" w! H' B
( z6 o0 X/ q6 k0 h, X1 Y我的问题就是0 [3 y4 J2 e* V" R/ A7 C& }
1,要是接两个内存芯片的话必须这么接么?这么接有什么好处?
# i9 A7 p0 `7 M' P: W2,要是接两个芯片的话可不可以将两个芯片的数据线都接续到一起?
# H: d* V/ g" p8 I- _8 v3,我现在是用了两个ddr2 (32M*16),但是我要是用一个ddr2 (64M*16)的话这两种方式谁更快一点,原因?7 E! f/ }" I& _8 P' v, M1 T( e, C
4,现在内存标称频率还有待于选择,比如说我现在可以用ddr2 667的内存,也可以用ddr2 533的内存,要是都工作在533MHz的话
. b2 \' g$ i# j* p5 a ddr2 667的电磁干扰(EMI)会不会更大一点啊? |
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