節錄自 EE Times︰ : T- j |2 W8 R( P' }/ h- kThe DRAM word line requires higher voltages to activate the access transistor, ensuring fast access during the on state and ultra-low leakage during the off-state. The availability of the 2.5V VPP means that the word line voltage does not have to be inefficiently supplied (pumped up) from the 1.2V VDDQ supply, thereby improving energy/power efficiency.+ r. @* ?; u: B( y4 [
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