節錄自 EE Times︰ 5 X! |" d9 K z- rThe DRAM word line requires higher voltages to activate the access transistor, ensuring fast access during the on state and ultra-low leakage during the off-state. The availability of the 2.5V VPP means that the word line voltage does not have to be inefficiently supplied (pumped up) from the 1.2V VDDQ supply, thereby improving energy/power efficiency.0 @/ U& {# Q5 `) Z1 v" k- f