節錄自 EE Times︰ 6 u4 J8 \0 ^2 r) kThe DRAM word line requires higher voltages to activate the access transistor, ensuring fast access during the on state and ultra-low leakage during the off-state. The availability of the 2.5V VPP means that the word line voltage does not have to be inefficiently supplied (pumped up) from the 1.2V VDDQ supply, thereby improving energy/power efficiency. , Z! y$ X2 e/ H: t( T6 J7 ?5 f) ~+ X2 j+ d& f$ K' l9 ]& ]+ i, m
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发表于 2016-9-12 15:48
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反对！
发表于 2016-9-12 18:42
