節錄自 EE Times︰ : j) z- \ B. i: ?' d$ lThe DRAM word line requires higher voltages to activate the access transistor, ensuring fast access during the on state and ultra-low leakage during the off-state. The availability of the 2.5V VPP means that the word line voltage does not have to be inefficiently supplied (pumped up) from the 1.2V VDDQ supply, thereby improving energy/power efficiency. 9 X8 M5 \) @, Q/ G ' Q; H7 z3 I: }: }