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節錄自 EE Times︰7 s8 W* N" ?" n8 e$ ^0 u9 w
The DRAM word line requires higher voltages to activate the access transistor, ensuring fast access during the on state and ultra-low leakage during the off-state. The availability of the 2.5V VPP means that the word line voltage does not have to be inefficiently supplied (pumped up) from the 1.2V VDDQ supply, thereby improving energy/power efficiency.) o! p E1 e: F: W# W1 m X% P
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