Matlab电子电路分析（第三卷）

A-Lin

Matlab电子电路分析（第三卷）

CHAPTER TEN
$ E; s+ d$ k: W1 E, K$ K2 J+ t3 `SEMICONDUCTOR PHYSICS
In this chapter, a brief description of the basic concepts governing the flow of [size=9.96001pt]current in a pn junction are discussed. Both intrinsic and extrinsic semicon
/ z9 ~" h) H% G5 S1 oductors are discussed. The characteristics of depletion and diffusion capaci[size=9.96001pt]tance are explored through the use of example problems solved with
' E% U' e  T5 |' V4 sMATLAB. The effect of doping concentration on the breakdown voltage of[size=9.96001pt]pn junctions is examined.
/ t* R0 {! H1 s9 W9 G10.1 INTRINSIC SEMICONDUCTORS
10.1.1 Energy bands
; j8 b* y3 B& D7 ?- O. dAccording to the planetary model of an isolated atom, the nucleus that con[size=9.96001pt]tains protons and neutrons constitutes most of the mass of the atom. Electrons
" q% Z4 Q% c( C! ?, k5 k  [surround the nucleus in specific orbits. The electrons are negatively charged[size=9.96001pt]and the nucleus is positively charged. If an electron absorbs energy (in the
form of a photon), it moves to orbits further from the nucleus. An electron[size=9.96001pt]transition from a higher energy orbit to a lower energy orbit emits a photon for
a direct band gap semiconductor.
# U( E! `& E: B  aThe energy levels of the outer electrons form energy bands. In insulators, the[size=9.96001pt]lower energy band (valence band) is completely filled and the next energy
& n. M6 h9 k$ g1 V. w3 vband (conduction band) is completely empty. The valence and conduction[size=9.96001pt]bands are separated by a forbidden energy gap.

8 J. I, P1 h3 {3 \[size=9.96001pt]
6 n1 f, m7 J) }3 K' l7 V
8 Y, w. {8 N3 P3 D; b

游客，如果您要查看本帖隐藏内容请回复

llbnmo

谢谢分享