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也请教一下yuxuan51版主~~
1 I9 ]- M Y, S最大电流是根据芯片datasheet中的IDD计算的么?貌似很难找到计算目标阻抗的实例啊。。我列举点数据,能不能教大家算一下?
' `& y" q" \ s2 T& \4 n" FDDR3 DRAM datasheet 中" P0 K. d: o4 F/ O
Parameter Symbol Max% S f9 V+ [% ]; l. k5 w, l6 }
Operating current (ACT-PRE) IDD0 65MA
, M* Z7 x* ~! M6 f( ~7 {Operating current (ACT-READ-PRE) IDD1 80MA
$ u3 \! g8 f- {: f! kPrecharge power-down standby current IDD2 35MA
! M! a+ ]- H& a4 B: e1 D& Y7 B+ _$ YPrecharge standby current IDD2N 45MA- r8 k6 R. D. R) k
Precharge standby ODT current IDD2NT 45MA8 L0 |. c# ]4 ]; N4 A, C
Precharge quiet standby current IDD2Q 45MA5 }; W9 A3 x4 W+ |# L; z+ t# \) d! H
Active power-down current(Always fast exit) IDD3P 39MA
* N" ~7 f" z$ k, p K F/ V* tActive standby current IDD3N 55MA
! Q+ p8 v" P7 A5 H8 p- r7 }& OOperating current (Burst read operating) IDD4R 125MA. w T8 H0 e/ s2 E3 N8 M6 G
Operating current (Burst write operating) IDD4W 130MA
* ~, d1 b9 n7 rBurst refresh current IDD5B 250MA" s2 s Z% e- a9 L; v
All bank interleave read current IDD7 210MA" ^3 x) C& j# e7 t) \
最大电流按250mA * 0.5 算??
8 G C3 K M+ M( n+ }0 B' H另外,一条板子需要8个DRAM颗粒,这样的话是不是电流还要乘以8?
1 N- F6 Q- I" h& R/ {& [先谢谢~ |
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