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也请教一下yuxuan51版主~~' S, ~. I+ \, U1 t s/ u2 H
最大电流是根据芯片datasheet中的IDD计算的么?貌似很难找到计算目标阻抗的实例啊。。我列举点数据,能不能教大家算一下?
: y7 X( u- R! U* S% ODDR3 DRAM datasheet 中3 c4 E0 R& G9 y1 J1 y
Parameter Symbol Max
9 {" @: m" ]0 S. S8 ZOperating current (ACT-PRE) IDD0 65MA8 W. Q3 X+ _5 d
Operating current (ACT-READ-PRE) IDD1 80MA
z# c; ?, D' `( y1 Z8 @Precharge power-down standby current IDD2 35MA
8 k, p/ x: z; TPrecharge standby current IDD2N 45MA
. Y; V3 _: h: J. mPrecharge standby ODT current IDD2NT 45MA& y/ l' x' B9 M$ g
Precharge quiet standby current IDD2Q 45MA* m$ q( A1 l) M
Active power-down current(Always fast exit) IDD3P 39MA! [3 j; |, z) x4 J
Active standby current IDD3N 55MA
; o ~/ d G# Z% H9 s3 ROperating current (Burst read operating) IDD4R 125MA* p, ]* J& Z6 W; U
Operating current (Burst write operating) IDD4W 130MA
3 H. n3 V2 L n- ^: U" EBurst refresh current IDD5B 250MA- v' K* N9 C' n6 n# K5 Z, b
All bank interleave read current IDD7 210MA* |* x' b* L0 l& ?3 d
最大电流按250mA * 0.5 算??
3 @( R# X5 D7 o6 ^ s$ r另外,一条板子需要8个DRAM颗粒,这样的话是不是电流还要乘以8?* ?! N3 h3 A; R
先谢谢~ |
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