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2020-1-14 15:59 |
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FPGA导出的IBIS模型如何编辑修改差分的模型？
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发现导出来的默认没有差分定义的模型（虽然IO分配上定义差分对）$ P; V9 O+ `; K2 f- b. d, l4 `3 k
如果只是在IBIS文件上手动添加 差分对管脚是否够用？5 w7 I! D. m! y$ A
[Model] DQ_FULL_800
+ v& x5 c) w8 I& Y0 t6 R" @Model_type I/O2 L. e# S- T: P. I, \3 X
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% a/ h: R/ q8 b) |% G ]Vinl = 700.000mV B* N9 M. x+ f
Vinh = 1.100V5 m' f0 N( a! W2 ?! b4 W
Vmeas = 900.000mV
0 T7 x) B' T- q3 _, CVref = 900.000mV, \9 r7 Q d5 O# F
Cref = 0.000pF1 @" R1 M0 s f& M. g6 F% q( B
Rref = 25.000Ohm
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+ o, {) s! W7 C| typ min max
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C_comp 2.466pF 2.316pF 2.616pF! X& ^/ w- v% J
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[Model Spec]
/ h+ n' G! E% q| Input threshold voltage corners
4 _( x3 o. S/ f/ ~Vinl 0.700V 0.650V 0.750V
7 ~, a$ e# b. O2 Y a. L% jVinh 1.100V 1.050V 1.150V! _0 U, l1 m, Y, G: k7 @
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| Measurement voltage corners7 D/ [8 z. R3 s) o
Vmeas 0.900V 0.850V 0.950V
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| Timing spec test load voltage corners: e/ E0 c+ t: h& T. k$ M# Y
Vref 0.900V 0.850V 0.950V4 a8 n9 s O8 Y3 r6 U2 H
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[Receiver Thresholds]
' A& ?+ \) E- C, tVth = 0.900V. B6 K9 [& J8 ~
Vth_min = 0.882V! z/ |4 ~3 Q) u! @, H
Vth_max = 0.918V M |6 _4 |2 D
Vinh_ac = 0.200V
9 N& a$ ? L0 J& B/ s- GVinh_dc = 0.125V
5 i( Z; w( {+ q0 w- s2 cVinl_ac = -0.200V) r* P* a4 m8 E% b* n: C
Vinl_dc = -0.125V7 ]- Z2 y& w3 E4 |
Tslew_ac = 5.000ns |Not specified, so set to high value3 J# E( G5 K% B7 L$ r- `8 p
Threshold_sensitivity = 0.508 B) s' h# I7 U E3 I
Reference_supply Pullup_ref- l4 u& H! ^0 V
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[Voltage Range] 1.800V 1.700V 1.900V
. s" w1 ]9 R# m6 v# V0 W: w[Pullup Reference] 1.800V 1.700V 1.900V
9 S2 g8 V8 ~; \" s- v9 {| Junction Temperature (Ambient temp is 35C typ, 105C min, -40C max)
; o0 t% U- |) T- Q[Temperature Range] 50.0 120.0 -40.0
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, e5 B3 N A% I# Q|***************************************************************************9 x- j* \" H& f4 j
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[Model] DQS_FULL_8001 a5 u) @$ e+ J
Model_type I/O" O- M! S/ z# {5 K
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$ e/ J; a% g" p; p$ U6 S) xVinl = 700.000mV
$ Z/ q- q8 ^$ c% w/ E# d3 e C5 }Vinh = 1.100V; N! a9 g _$ J
Vmeas = 900.000mV: n! S" z; O7 f5 O" j! @
Vref = 900.000mV
) J; r* u' e+ V3 R0 \$ OCref = 0.000pF4 p& F3 S1 d0 `4 D0 R
Rref = 25.000Ohm4 V ~: v4 D* K/ i8 A
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5 |2 Q1 `) X; x. O L w# n1 g| typ min max3 R; O: i: K1 J9 e' H& |
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C_comp 2.466pF 2.316pF 2.616pF, w, N) N* p/ \, _: i
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" o( |- c0 R# [8 f; A[Model Spec]
8 s2 P% Y* O5 O. F| Input threshold voltage corners6 U# k; `( y* ]+ ]( r
Vinl 0.700V 0.650V 0.750V
9 h- J8 e" J" q8 w# K# J& e& dVinh 1.100V 1.050V 1.150V
; B7 _4 L: Y2 n* ^0 f3 H b5 y6 u|
+ W( ]: o1 N" y0 e. ^# R| Measurement voltage corners
+ M) B! v- S8 x# pVmeas 0.900V 0.850V 0.950V
' ]7 W p5 X# S0 { X|
s6 S, `5 F* O: C4 t| Timing spec test load voltage corners7 X3 B o; ?1 b, r$ J
Vref 0.900V 0.850V 0.950V
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[Receiver Thresholds] / t, F! C' ^& h" n2 o, a
|Vth = 0.900V \: y+ o r+ N* g; G" @ T, {
|Vth_min = 0.882V
) i" _. s: J2 q5 s& a|Vth_max = 0.918V
1 \5 H3 V4 g' Y% ^# F|Vinh_ac = 0.200V" l: e9 {" U( k
|Vinh_dc = 0.125V
$ r) v# L: P" B7 J7 [3 I|Vinl_ac = -0.200V
9 o: z# [. i, y2 O2 T4 n( P|Vinl_dc = -0.125V
! J: W# v" h( y- S3 P, G: {|Tslew_ac = 5.000ns |Not specified, so set to high value
, p z, D5 A7 P$ ^5 w. @! y|Threshold_sensitivity = 0.50
# h, X: ?1 N( ]& O3 Y- b! l|Reference_supply Pullup_ref
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; k/ T6 I$ L- \|NOTE: If using the IBISCHK 4.2.1 or older parser, Differential receiver # r+ f7 u( L o- L; r
|threshold parameters must be commented out because the parser generates/ D4 w8 S2 z4 \% m& f
|errors for multiple differential models.* h+ ~6 n, K* z! c I/ Q- _
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4 ^, E8 l8 k/ a2 u+ e ~Vcross_low = 0.675V% d; \0 h9 ~4 z3 g
Vcross_high = 1.125V2 U: O2 Y7 L. W2 j1 _
Vdiff_ac = 500mV0 f" ?) b% ]" i/ \6 B
Vdiff_dc = 250mV9 m* i% {0 y/ W$ p' O, z$ j. _
Tdiffslew_ac = 5.000ns |Not specified, so set to high value1 Z" I+ T$ v+ ^7 h$ t
|/ \* E+ k) [1 z( e5 W
[Voltage Range] 1.800V 1.700V 1.900V
- B% q4 ]2 x) n3 v( l& k# E[Pullup Reference] 1.800V 1.700V 1.900V( F; } v% }, V P& P- n
| Junction Temperature (Ambient temp is 35C typ, 105C min, -40C max)
% V0 p1 a* `( l, p$ B[Temperature Range] 50.0 120.0 -40.0; T3 x% k4 X% g' A$ U: J6 ^$ {5 W# ^
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/ r+ d( x. F. u( p( h|***************************************************************************
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这是从 美光DDR2的IBIS模型里面截取出来的，对着DQ与DQS在模型上的定义
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====================================================================================
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手动修改编辑成下面的这样的时候发现编辑器会提示错误! y8 ? _# x( v; ?. p( q
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% @4 Y1 n) H$ {! O[Model Selector] DQ; T: _. {% W; q5 u% a5 j" `
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DQ_SSTL18_II_F_HR
4 c; x" Y: C9 g9 p( KDQ_SSTL18_II_S_HR
; b9 m: G4 w J3 JDQ_SSTL18_II_F_HR_IN50
; N4 X0 g+ u/ T* e" WDQ_LVCMOS18_F_4_HR
( f4 y8 D x0 ODQ_LVCMOS18_F_8_HR
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# o; w5 p. H; v1 K3 [% V) N[Model Selector] DQS$ o) g" u8 s+ ^ e1 g0 t( R
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DQS_SSTL18_II_F_HR7 S, e5 i I+ q
DQS_SSTL18_II_F_HR_IN508 ]' T" i. b: M4 _, b l5 N
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ibis编辑器检查的时候发现提示的错误是：incorrect number of line items for keyword model selector expecting 2
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发表于 2020-3-20 10:48
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