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各位大侠
" a3 s) b" U3 u. z4 C现在碰到一个问题
" W& f; K. n1 _. j就是ddr2内存接续的问题% \! b0 v0 L- H0 X5 A: {
现在系统cpu是三星的32位的s3c2450(ARM9核心),支持ddr,mobile ddr和ddr2
# d' ~+ {& n5 W* { The S3C2450 Mobile DRAM Controller supports three kinds of memory inteRFace - (Mobile) SDRAM and mobile
% Z6 p5 h! p- i& A6 IDDR and DDR2. Mobile DRAM controller provides 2 chip select signals (2 memory banks), these are used for up
# m& R! K* u; k- Z& Zto 2 (mobile) SDRAM banks or 2 mobile DDR banks or 2 DDR2 banks. Mobile DRAM controller can’t support 3+ a* k; `$ J: X6 `1 w- N0 H' r* \6 ~
kinds of memory interface simultaneous, for example one bank for (mobile) SDRAM and one bank for mobile
0 [ Z4 p" y& U" SDDR.; W1 [1 H1 ^& H; I: {
DDR2 Features
& K: @, Y. X% d− Support DDR2 having 4-bank architecture, don’t support 8-bank architecture.
- f2 M: s1 k' m) Y4 H, w0 q− Support 16-bit external data bus interface
4 t& r: [3 A% _: g# r& P7 i4 B+ E− Support AL(Additive Latency) 0, don’t support posted CAS, it needs EMRS setting.- ?4 E. I2 K: I, P- o/ Y
− Don’t support ODT and nDQS function, it needs EMRS setting.
Z2 P0 K8 a! _2 i− All other features are same to the features of SDR/mDDR8 ~- a& {" e1 o* G0 w! [' s
; A2 ]& B+ ?% z4 z; `/ T
但是我看他们接续的时候7 i X- M( G; J4 _& a4 |' w" _
接续了两个ddr2 (32M*16),而内存上只有十六位数据线
p8 h( c& _+ A, M# B9 V' {2 H5 Z于是他们就将两个内存芯片的数据线分为高十六位和低十六位6 Y6 {2 f1 t6 ]) r3 @, i
; d+ c9 M/ F. R, F- h$ r9 \我的问题就是& T! S8 {2 f* \6 U5 C
1,要是接两个内存芯片的话必须这么接么?这么接有什么好处?
% r: ^2 }- Y* \2 u8 c2,要是接两个芯片的话可不可以将两个芯片的数据线都接续到一起?
# H" t) o( m8 C' ?4 I ]3,我现在是用了两个ddr2 (32M*16),但是我要是用一个ddr2 (64M*16)的话这两种方式谁更快一点,原因?
1 H2 E: I9 r& `0 g1 N$ W3 P4,现在内存标称频率还有待于选择,比如说我现在可以用ddr2 667的内存,也可以用ddr2 533的内存,要是都工作在533MHz的话
, w& ]9 B' i" y/ D1 t ddr2 667的电磁干扰(EMI)会不会更大一点啊? |
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