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Design And Application Guide For High Speed MOSFET Gate Drive Circuits; V5 H+ X1 \- [6 n9 |( B6 B3 i' v# k
The main purpose of this paper is to demonstrate a systematic approach to design high peRFormance/ h5 P2 P8 Q l
gate drive circuits for high speed switching applications. It is an informative collection of topics offering6 `* q J- y/ I$ E
a “one-stop-shopping” to solve the most common design challenges. Thus it should be of interest to
6 F4 @' Q: b+ w& opower electronics engineers at all levels of experience.% K1 z* R( ~- d# b( D" K4 E; T
The most popular circuit solutions and their performance are analyzed, including the effect of parasitic8 `1 P! R% W: z. p6 z! ^
components, transient and extreme operating conditions. The discussion builds from simple to more2 I* X- N" O* P, ?
complex problems starting with an overview of MOSFET technology and switching operation. Design
- U. F$ B! P" v4 K' ^. Wprocedure for ground referenced and high side gate drive circuits, AC coupLED and transformer isolated
5 d% ?2 q; n, a2 J) n% o1 ^solutions are described in great details. A special chapter deals with the gate drive requirements of the
, r# h" K# a2 P. ^0 hMOSFETs in synchronous rectifier applications.
6 s. a# o3 i4 _5 h# i8 E' mSeveral, step-by-step numerical design examples complement the paper.
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发表于 2022-7-25 09:54
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