标题: 铁电存储IC擦写次数 [打印本页] 作者: QWE4562009 时间: 2023-12-14 10:28
提示: 作者被禁止或删除 内容自动屏蔽作者: huo_xing 时间: 2023-12-14 10:56
你说的大是指封装，不是晶圆。这两个没有必然联系作者: 超級狗 时间: 2023-12-15 16:47 偉雞百科的解釋 9 i8 l, w5 w! t. m: I6 VAn additional limitation on size is that materials tend to stop being ferroelectric when they are too small. (This effect is related to the ferroelectric's "depolarization field".) There is ongoing research on addressing the problem of stabilizing ferroelectric materials; one approach, for example, uses molecular adsorbates. - P; E W; D. \ % I: @ c" h8 O* I! I% cTo date, the commercial FeRAM devices have been produced at 350 nm and 130 nm. Early models required two FeRAM cells per bit, leading to very low densities, but this limitation has since been removed.: P( m: x+ V: o3 A
8 }2 Q. H5 R5 Z* s作者: 超級狗 时间: 2023-12-15 17:18 本帖最后由 超級狗 于 2023-12-15 17:27 编辑 1 ~% U4 ^& V6 d: x4 o+ M8 i$ f1 _' e3 J7 E
日寇東芝半導體（Toshiba）ˊ2009 年說，他們能做到 128M bit。 , ~, J2 C7 W5 K& t& }6 I, J! A% _- R( J) c# L4 D [ https://www.global.toshiba/ww/news/corporate/2009/02/pr0902.html * P, i- k k' W/ L5 F( z K) W7 o* V$ _ R
